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40V, 250 A Rad Hard Enhancement Mode GaN Transistor

SKU: EPC7001

GaN Power Transistor by Efficient Power Conversion (8 more products)
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The EPC7001 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 2.1 to 4 mOhms, Continous Drain Current 60 A, Pulsed Drain Current 250 A. Tags: Die. More details for EPC7001 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7001
  • Manufacturer
    Efficient Power Conversion
  • Description
    40V, 250 A Rad Hard Enhancement Mode GaN Transistor

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    2.1 to 4 mOhms
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    250 A
  • Total Charge
    11 nC
  • Input Capacitance
    1342 pF
  • Output Capacitance
    792 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Dimensions
    4.1 x 1.6 mm

Technical Documents
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