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40V, 62 A Rad Hard Enhancement Mode GaN Transistor

SKU: EPC7002

GaN Power Transistor by Efficient Power Conversion (8 more products)
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The EPC7002 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 8.5 to 14.5 mOhms, Continous Drain Current 10 A, Pulsed Drain Current 62 A. Tags: Die. More details for EPC7002 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7002
  • Manufacturer
    Efficient Power Conversion
  • Description
    40V, 62 A Rad Hard Enhancement Mode GaN Transistor

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    8.5 to 14.5 mOhms
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    62 A
  • Total Charge
    2.9 nC
  • Input Capacitance
    349 pF
  • Output Capacitance
    201 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Dimensions
    1.7 x 1.1 mm

Technical Documents
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