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200V Rad Hard Enhancement Mode Power Transistor

SKU: EPC7007

GaN Power Transistor by Efficient Power Conversion (8 more products)
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The EPC7007 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 17 to 25 mOhms, Continous Drain Current 20 A, Pulsed Drain Current 80 A. Tags: Die. More details for EPC7007 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7007
  • Manufacturer
    Efficient Power Conversion
  • Description
    200V Rad Hard Enhancement Mode Power Transistor

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    17 to 25 mOhms
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    80 A
  • Total Charge
    5.4 nC
  • Input Capacitance
    525 pF
  • Output Capacitance
    256 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Dimensions
    3.6 x 1.6 mm

Technical Documents
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