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200V, 170 A Rad Hard Enhancement Mode GaN Transistor

SKU: EPC7020

GaN Power Transistor by Efficient Power Conversion (8 more products)
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The EPC7020 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 8 to 11 mOhms, Continous Drain Current 39 A, Pulsed Drain Current 170 A. Tags: Die. More details for EPC7020 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7020
  • Manufacturer
    Efficient Power Conversion
  • Description
    200V, 170 A Rad Hard Enhancement Mode GaN Transistor

General Parameters

  • Segment
    Satellite
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    8 to 11 mOhms
  • Continous Drain Current
    39 A
  • Pulsed Drain Current
    170 A
  • Total Charge
    11.7 nC
  • Input Capacitance
    1137 pF
  • Output Capacitance
    494 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Die
  • Dimensions
    4.6 x 2.6 mm

Technical Documents
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