The FBG10N30B by EPC Space is a Radiation-Hardened Enhancement Mode (eGAN) Transistor designed for critical applications in high-reliability and commercial satellite space environments. It has a drain-source voltage of 100 V and a gate threshold voltage of 2.5 V.  It has a continuous drain current of up to 30 A and a pulsed drain current of less than 120 A. This GaN transistor has a low drain-source on-resistance of 12 mΩ and a mass of 0.135 g. It has high electron mobility and a low temperature coefficient. The lateral structure of the die provides for very low gate charge (QG), fast power supply switching frequencies, high power densities, and high efficiency. This compact hermetically packed surface mount eGAN transistor measures 5.715 x 3.937 mm and is ideal for applications such as satellites, avionics, and deep space probes.