Radiation Hardened 100 V eGaN Transistor


GaN Power Transistor by EPC Space (8 more products)

Note : Your request will be directed to EPC Space.

FBG10N30B Image

The FBG10N30B by EPC Space is a Radiation-Hardened Enhancement Mode (eGAN) Transistor designed for critical applications in high-reliability and commercial satellite space environments. It has a drain-source voltage of 100 V and a gate threshold voltage of 2.5 V.  It has a continuous drain current of up to 30 A and a pulsed drain current of less than 120 A. This GaN transistor has a low drain-source on-resistance of 12 mΩ and a mass of 0.135 g. It has high electron mobility and a low temperature coefficient. The lateral structure of the die provides for very low gate charge (QG), fast power supply switching frequencies, high power densities, and high efficiency. This compact hermetically packed surface mount eGAN transistor measures 5.715 x 3.937 mm and is ideal for applications such as satellites, avionics, and deep space probes.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    EPC Space
  • Description
    Radiation Hardened 100 V eGaN Transistor

General Parameters

  • Segment
  • Configuration
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    8 to 12 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    8.3 to 11 nC
  • Input Capacitance
    850 to 1000 pF
  • Output Capacitance
    500 to 700 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Dimensions
    5.715 x 3.937 mm

Technical Documents