The IGN1011S3600 from Integra Technologies is a GaN RF Power Transistor designed for L-band avionics and surveillance radar applications. Operating across the 1030 to 1090 MHz frequency range, this GaN transistor delivers high gain performance of 18 to 22 dB, making it well suited for demanding transmit applications in aerospace and defense systems.

The transistor offers excellent efficiency with a maximum drain efficiency of up to 75% and provides strong impedance matching with an input return loss of up to 25 dB. It features a high drain–source voltage rating of 400 V and supports a continuous drain current of 144 A, enabling reliable high-power operation in pulsed and continuous-wave RF systems.

The IGN1011S3600 operates from a 100 V supply and supports a minimum supply power level of 3600 W, delivering the performance required for high-duty-cycle and high-output-power L-band transmitters. Manufactured using advanced GaN technology, the transistor is RoHS and REACH compliant, ensuring compatibility with modern environmental and regulatory requirements.

This high-power GaN RF transistor is ideally suited for Identification Friend or Foe (IFF) and Secondary Surveillance Radar (SSR) avionics systems, supporting both uplink and downlink transponder operations in L-band aerospace and defense applications where high efficiency, reliability, and output power are critical.