The ICPB1020 from Microchip Technology is a GaN Power Transistor engineered for efficient, high-power RF amplification across a broad frequency range from DC to 14 GHz. Designed using advanced field plate technology, this GaN-on-SiC discrete HEMT delivers excellent power density, gain, and efficiency for demanding RF and microwave applications.

The transistor provides a pulsed output power of up to 51.6 W with linear gain levels reaching 21 dB and achieves a high power-added efficiency (PAE) of up to 77.7%. It operates from a 28 V drain bias and supports a drain-to-gate voltage of 80 V, enabling reliable high-voltage operation. Additional electrical characteristics include a gate current range of –20 to 60 mA and a maximum power dissipation of 128 W, ensuring robust thermal and electrical performance under high-power conditions.

Housed in a compact enclosure measuring 0.82 x 4.56 x 0.10 mm, the ICPB1020 is well suited for space-constrained designs. This GaN power transistor is ideal for aerospace and defense systems, broadband wireless communications, radar, and other high-efficiency RF power applications requiring wideband operation and high reliability.