ISL70020SEH

GaN Power Transistor by Renesas (5 more products)

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ISL70020SEH Image

The ISL70020SEH from Renesas is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 1.2 to 8 milli-ohm, Continous Drain Current 65 A, Total Charge 19 to 25 nC. Tags: Surface Mount. More details for ISL70020SEH can be seen below.

Product Specifications

Product Details

  • Part Number
    ISL70020SEH
  • Manufacturer
    Renesas
  • Description
    65 A Enhancement Mode GaN Power Transistor

General Parameters

  • Segment
    Ground
  • Configuration
    Single
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    1.2 to 8 milli-ohm
  • Continous Drain Current
    65 A
  • Total Charge
    19 to 25 nC
  • Input Capacitance
    1920 pF
  • Output Capacitance
    1620 to 2430 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Dimensions
    6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)

Technical Documents