The ISL73023SEH from Renesas is an N-Channel, Enhancement-mode GaN Power Transistor optimized for high-reliability aerospace, medical, nuclear, and industrial applications. Engineered using advanced GaN technology, it supports a 100 V drain-source breakdown voltage, 60 A continuous drain current, and ultra-low 5 mΩ RDS(on) for superior power efficiency and thermal performance.

This radiation-tolerant device withstands up to 75 krad(Si) total ionizing dose and offers Single Event Effect (SEE) robustness up to 86 MeV·cm²/mg, making it an excellent choice for space and high-radiation environments. Additional key specifications include a 0.7–2.5 V gate threshold voltage, 0.1–1.1 mA leakage current, and a low 14 nC total gate charge.

Packaged in a compact, hermetically sealed surface mount package measuring 9 x 4.7 x 1.82 mm, the ISL73023SEH is ideal for switch-mode regulation, motor drives, relay/inrush protection, and high-reliability power conversion systems, delivering exceptional efficiency and rugged performance under extreme conditions.