Rad Hard Low Voltage 4 Megabit (512k x 8-bit) EEPROM Memory

SKU: 79LV0408

Space Qualified Memory by Data Device Corporation (35 more products)

Note : Your request will be directed to Data Device Corporation.

The 79LV0408 from Data Device Corporation is a Space Qualified Memory with Storage Capacity 4 Mb, Read Access Time 200 to 250 ns, Write Access Time 15 ms, Radiation Dose 10 krad, 25 krad, 40 krad, 60 krad, Mass 10 gms, 23 gms. More details for 79LV0408 can be seen below.

Product Specifications

Product Details

  • Part Number
    79LV0408
  • Manufacturer
    Data Device Corporation
  • Description
    Rad Hard Low Voltage 4 Megabit (512k x 8-bit) EEPROM Memory

General Parameters

  • Memory Type
    EEPROM
  • Storage Capacity
    4 Mb
  • Volatility
    Non-Volatile
  • Read Access Time
    200 to 250 ns
  • Write Access Time
    15 ms
  • Data Retention
    10 Years
  • Radiation Dose
    10 krad, 25 krad, 40 krad, 60 krad
  • Mass
    10 gms, 23 gms
  • Standard
    MIL-STD-883
  • Voltage
    3 to 3.6 V
  • Current
    15 mA
  • Power Consumption
    0.088 W
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Package
    40 Pin RAD-PAK® Flat Pack
  • Application
    Space Applications