The HX6136 from Honeywell Aerospace is a Space Qualified Memory with a configuration of 1K x 36 memory. This radiation hardened memory has a high performance 1024-word by 36-bit memory array that is fabricated with Honeywell’s SOI CMOS technology with a 150 angstrom gate oxide. It has a write access time of 36 ns and a storage capacity of 36 Mb. This monolithic static RAM has an average output current of 25 mA and has a package power dissipation of 2.5 W. It has a junction temperature of 175 deg C and a has a package thermal resistance of 5 deg C/W. This space-qualified FIFOs are available with either TTL or CMOS compatible I/O ports. The memory cell is single event upset hardened with multi layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening. The SRAM is designed for a wide variety of data buffering needs, including high-speed data acquisition, multiprocessor interfaces and communications buffering.