The HX6408 from Honeywell Aerospace is a Space Qualified Memory with a configuration of 512K x 8-bit memory. This monolithic static RAM is a high performance 524,288 word x 8-bit static random access memory that is fabricated with Honeywell’s radiation hardened technology with a 80 angstrom gate oxide. It has a write access time of 20 ns and a storage capacity of 8 Mb. This monolithic static RAM has an average output current of 25 mA and has a package power dissipation of 2.5 W. It has a junction temperature of 175 deg C and a power consumption of 710 mW. The SRAM operates over the full military temperature range and requires a DC power supply of 3.3 V. This space-qualified SRAM is available with CMOS compatible I/O ports. The memory cell is single event upset hardened with multi layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening. The SRAM is designed for use in systems operating in radiation environments.
