The HX6409 from Honeywell Aerospace is a Space Qualified Memory with a configuration of 4K x 9-bit memory. This magneto-resistive RAM is a high performance 4096 word x 9 bit static random access memory that is fabricated with Honeywell’s radiation hardened technology with a 150 angstrom gate oxide. It has a write access time of 36 ns and has an average output current of 25 mA. This monolithic static RAM has a package power dissipation of 2.5 W and has a junction temperature of 175 deg C. The SRAM operates over the full military temperature range and requires a DC power supply of 5 V. This space-qualified SRAM is available with CMOS or TTL compatible I/O ports. The memory cell is single event upset hardened with multi layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening. The SRAM is designed for use in systems operating in radiation environments.
