16 Megabit Non-Volatile Magneto-Resistive RAM

SKU: HXNV01600

Space Qualified Memory by Honeywell Aerospace (18 more products)

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The HXNV01600 from Honeywell Aerospace is a Space Qualified Memory with Storage Capacity 16 Mb, Read Access Time 95 ns, Write Access Time 140 ns, Radiation Dose 1x106 rad (Si), 3x105 rad (Si), Voltage 2.5 to 3.3 V. More details for HXNV01600 can be seen below.

Product Specifications

Product Details

  • Part Number
    HXNV01600
  • Manufacturer
    Honeywell Aerospace
  • Description
    16 Megabit Non-Volatile Magneto-Resistive RAM

General Parameters

  • Memory Type
    MRAM
  • Storage Capacity
    16 Mb
  • Volatility
    Non-Volatile
  • Read Access Time
    95 ns
  • Write Access Time
    140 ns
  • Output Waveform
    CMOS
  • Data Retention
    15 Years
  • Radiation Dose
    1x106 rad (Si), 3x105 rad (Si)
  • Soft Error Rate
    1x10-10 upsets/bit-day
  • Dose Rate Upset
    1x1010 rad(Si)/s
  • Dose Rate Survivability
    1x1012 rad(Si)/s
  • Voltage
    2.5 to 3.3 V
  • Current
    90 mA
  • Power Consumption
    1.25 W (Power Dissipation)
  • Programming Endurance
    1x1015 Cycles
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Package
    76 Lead Shielded Ceramic Quad Flat Pack
  • Application
    Space and military

Technical Documents