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2 to 18 GHz 5W GaN PA MMIC

SKU: ICP1137

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The ICP1137 from Microchip Technology is a RF Amplifier with Frequency 2 to 18 GHz, Gain 10 to 12 dB, Small Signal Gain 18 dB, Saturated Power 4.266 to 5.012 W, Input Power 26 to 27 dbm. Tags: Chip, Die, Power Amplifier. More details for ICP1137 can be seen below.

Product Specifications

Product Details

  • Part Number
    ICP1137
  • Manufacturer
    Microchip Technology
  • Description
    2 to 18 GHz 5W GaN PA MMIC

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    2 to 18 GHz
  • Gain
    10 to 12 dB
  • Small Signal Gain
    18 dB
  • Saturated Power
    4.266 to 5.012 W
  • Input Power
    26 to 27 dbm
  • Input Power
    0.398 to 0.501 W
  • PAE
    20%
  • Impedance
    50 Ohms
  • Return Loss
    10 to 12 dB
  • Input Return Loss
    12 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    24 V (Drain)
  • Current Consumption
    114 mA (Drain)
  • Technology
    GaN on SiC
  • Package Type
    Chip, Die
  • Dimensions
    4.7 x 3 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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