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17 to 21 GHz 5W GaN PA MMIC

SKU: ICP1937

RF Amplifier by Microchip Technology
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The ICP1937 from Microchip Technology is a RF Amplifier with Frequency 17.7 to 21.2 GHz, Small Signal Gain 28 dB, Saturated Power 5.012 W, Input Power 20 dBm, Input Power 0.1 W. Tags: Die, Power Amplifier. More details for ICP1937 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ICP1937
  • Manufacturer
    Microchip Technology
  • Description
    17 to 21 GHz 5W GaN PA MMIC

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    17.7 to 21.2 GHz
  • Small Signal Gain
    28 dB
  • Saturated Power
    5.012 W
  • Industry Application
    SATCOM
  • Input Power
    20 dBm
  • Input Power
    0.1 W
  • PAE
    30%
  • Impedance
    50 Ohms
  • Return Loss
    8 to 12 dB
  • Input Return Loss
    12 dB
  • Output Return Loss
    8 dB
  • Supply Voltage
    24 V (Drain)
  • Power Dissipation
    40 to 58 W
  • Current Consumption
    84 mA (Drain)
  • Technology
    GaN on SiC
  • Package Type
    Die
  • Pulsed/CW
    CW
  • Dimensions
    3.2 x 2.6 mm
  • Saturated Power
    37 dBm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Sub-Category
    GaN Amplifier
  • Application
    Point-to-point, Radio

Technical Documents
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