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GaN HEMT Driver Power Amplifier from 10 to 14 GHz

SKU: APN250

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The APN250 from Northrop Grumman Corporation is a RF Amplifier with Frequency 10 to 14 GHz, Gain 12 to 13 dB (Linear), Power Gain 9.5 dB, P1dB 7.944 W, Saturated Power 11.221 to 15.849 W. Tags: Die, Power Amplifier, Driver Amplifier. More details for APN250 can be seen below.

Product Specifications

Product Details

  • Part Number
    APN250
  • Manufacturer
    Northrop Grumman Corporation
  • Description
    GaN HEMT Driver Power Amplifier from 10 to 14 GHz

General Parameters

  • Type
    Power Amplifier, Driver Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Point-to-Point, Point-to-Multipoint, Radio, Test Instrumentation
  • Frequency
    10 to 14 GHz
  • Gain
    12 to 13 dB (Linear)
  • Power Gain
    9.5 dB
  • P1dB
    7.944 W
  • Saturated Power
    11.221 to 15.849 W
  • PAE
    0.37
  • Return Loss
    20 to 25 dB
  • Input Return Loss
    20 to 25 dB
  • Output Return Loss
    20 to 25 dB
  • Supply Voltage
    22 V
  • Current Consumption
    640 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Die
  • Dimensions
    4.3 x 4.3 mm
  • Space Qualified
    Yes

Technical Documents
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