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7 to 13 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

SKU: CHA2063a99F

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The CHA2063a99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 7 to 12 GHz, Gain 17 to 19 dB, Gain Flatness ±2 dB, Noise Figure 2 to 3 dB, Output Power 8 dBm. Tags: Chip, Low Noise Amplifier. More details for CHA2063a99F can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA2063a99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    7 to 13 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

General Parameters

  • Type
    Low Noise Amplifier
  • Frequency
    7 to 12 GHz
  • Gain
    17 to 19 dB
  • Gain Flatness
    ±2 dB
  • Noise Figure
    2 to 3 dB
  • Output Power
    8 dBm
  • Output Power
    0.006 W
  • P1dB
    0.006 W
  • IM3
    18 dBm
  • VSWR
    2.00:1, 3.00:1, 2.00:1, 3.00:1
  • Input VSWR
    2.00:1, 3.00:1
  • Output VSWR
    2.00:1, 3.00:1
  • Space Heritage
    Yes
  • Supply Voltage
    5 V (Drain Voltage)
  • Current Consumption
    40 to 80 mA (Drain Current)
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Chip
  • Dimensions
    1.52 x 1.27 x 0.1 mm
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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