The CHA2069-FAB from United Monolithic Semiconductors is a Space Qualified RF Amplifier that operates from 16-32 GHz. It has a gain of 22 dB and P1dB value of 10 dBm. This low-noise amplifier has a noise figure of 2.5 dB and a gate length of 0.25 µm. It requires a DC supply of 3.3 V and a maximum drain current of 75 mA. This three-stage self-biased wide band monolithic amplifier has an input return loss of 10 dB and an output return loss of 10 dB. This SMD GaAs semiconductor is proposed in leadless surface mount hermetic metal ceramic 6 x 6 mm² package and requires a power supply of 4.5V/55mA. It has with a drain voltage of 5 V and an RF input power of 10 dBm. This RoHS-compliant amplifier is dedicated to space communications and is also well suited for a wide range of microwave and millimetre wave applications and systems.
