2 to 22 GHz GaAs Monolithic Microwave IC

SKU: CHA3024-FDB

RF Amplifier by United Monolithic Semiconductors (11 more products)

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The CHA3024-FDB from United Monolithic Semiconductors is a RF Amplifier with Frequency 2 to 22 GHz, Gain 14 to 15 dB, Noise Figure 3 dB, Output Power 18 dBm, Output Power 0.06 W. Tags: Surface Mount, Low Noise Amplifier. More details for CHA3024-FDB can be seen below.

Product Specifications

Product Details

Part Number
CHA3024-FDB
Manufacturer
United Monolithic Semiconductors
Description
2 to 22 GHz GaAs Monolithic Microwave IC

General Parameters

Type

Low Noise Amplifier
Application

Electronic warfare, Point to Point, Radio, Test Instrumentation, Space Qualified
Frequency

2 to 22 GHz
Gain

14 to 15 dB
Noise Figure

3 dB
Output Power

18 dBm
Output Power

0.06 W
P1dB

0.06 W
Saturated Power

0.15 W
Input Return Loss

10 dB
Output Return Loss

10 dB
Space Heritage

Yes
Supply Voltage

4.5 to 5.5 V
Current Consumption

190 mA
Quiscent Current

100 mA
Transistor Technology

pHemt
Technology

GaAs
Package Type

Surface Mount
Package

Hermatic, SMD Leadless
Space Qualified

Yes
Operating Temperature

-40 to 85 Degree C
Storage Temperature

-55 to 150 Degree C
RoHS

Yes
Note

Drain Current : 125 mA, Drain Voltage : 7 V