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5.8 to 16 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

SKU: CHA3656-FAB

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The CHA3656-FAB from United Monolithic Semiconductors is a RF Amplifier with Frequency 5.8 to 16 GHz, Gain 20 dB, Noise Figure 1.75 dB, Output Power 14.5 dBm, Output Power 0.28 W. Tags: Surface Mount, Low Noise Amplifier. More details for CHA3656-FAB can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA3656-FAB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    5.8 to 16 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

General Parameters

  • Type
    Low Noise Amplifier
  • Application
    Radar, Test and Instrumentation, hi-rel, Space Qualified
  • Frequency
    5.8 to 16 GHz
  • Gain
    20 dB
  • Noise Figure
    1.75 dB
  • Output Power
    14.5 dBm
  • Output Power
    0.28 W
  • P1dB
    0.28 W
  • IM3
    25 dBm
  • Input Return Loss
    8 dB
  • Output Return Loss
    10 dB
  • Space Heritage
    Yes
  • Supply Voltage
    1 to 3.3 V
  • Current Consumption
    70 mA
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Surface Mount
  • Package
    Hermatic, SMD
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Drain Voltage : 4.5 V

Technical Documents
View details on the manufacturer's website
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