1. Home
  2. Electrical / Electronic Components
  3. Amplifiers
  4. United Monolithic Semiconductors
  5. CHA3666-99F

6 to 17 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

SKU: CHA3666-99F

Download Datasheet Request Information

Note : Your request will be directed to United Monolithic Semiconductors.

CHA3666-99F Image

The CHA3666-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 6 to 17 GHz, Gain 19 to 21 dB, Gain Flatness ±0.5 dB, Noise Figure 1.8 to 2 dB, Output Power 15 to 17 dBm. Tags: Chip, Low Noise Amplifier. More details for CHA3666-99F can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA3666-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    6 to 17 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

General Parameters

  • Type
    Low Noise Amplifier
  • Frequency
    6 to 17 GHz
  • Gain
    19 to 21 dB
  • Gain Flatness
    ±0.5 dB
  • Noise Figure
    1.8 to 2 dB
  • Output Power
    15 to 17 dBm
  • Output Power
    0.03 to 0.05 W
  • P1dB
    0.03 to 0.05 W
  • IM3
    26 dBm
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • VSWR
    2.50:1, 2.70:1, 2.00:1, 2.20:1
  • Input VSWR
    2.50:1, 2.70:1
  • Output VSWR
    2.00:1, 2.20:1
  • Space Heritage
    Yes
  • Supply Voltage
    4 V (Drain Voltage)
  • Current Consumption
    60 to 100 mA (Drain Current)
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Chip
  • Dimensions
    1.47 x 1.47 x 0.1 mm
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
View similar products