The CHA3666-FAB from United Monolithic Semiconductors is a Space Qualified Monolithic Low Noise RF Amplifier that operates from 6 to 16 GHz. It has a noise figure of 1.8 to 2.5 dB. This amplifier has a small signal gain of 18.5-21 dB and a gain of flatness ±1 dB. It has an output power of 15-17 dBm with P1db of 0.03-0.05 W. The amplifier has an input return loss of 6.5-7 dB and an output return loss of 8.5-10 dB. It requires a supply voltage of 4V and has a current consumption of 60-100 mA. The circuit is manufactured with a standard pHEMT process and comes in a leadless surface mount hermetic metal ceramic 6 x 6 mm2 package. It is ideal for space applications and also well-suited for a wide range of microwave and millimeter wave applications and systems.