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CHA3666-FAB

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The CHA3666-FAB from United Monolithic Semiconductors is a RF Amplifier with Frequency 6 to 16 GHz, Gain 18.5 to 21 dB, Gain Flatness ±1 dB, Noise Figure 1.8 to 2.5 dB, Output Power 15 to 17 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for CHA3666-FAB can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA3666-FAB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    6 to 16 GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD package

General Parameters

  • Type
    Low Noise Amplifier
  • Application
    Microwave, millimetre wave, systems, Space Qualified
  • Frequency
    6 to 16 GHz
  • Gain
    18.5 to 21 dB
  • Gain Flatness
    ±1 dB
  • Noise Figure
    1.8 to 2.5 dB
  • Output Power
    15 to 17 dBm
  • Output Power
    0.03 to 0.05 W
  • P1dB
    0.03 to 0.05 W
  • IM3
    24 dBm
  • Input Return Loss
    6.5 to 7 dB
  • Output Return Loss
    8.5 to 10 dB
  • Space Heritage
    Yes
  • Supply Voltage
    4 V (Drain Voltage)
  • Current Consumption
    60 to 100 mA (Drain Current)
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Surface Mount
  • Package
    Hermatic, SMD Leadless, 6 x 6 mm2
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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