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12.5 to 30 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

SKU: CHA3689-99F

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The CHA3689-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 12.5 to 30 GHz, Gain 20 to 26 dB, Gain Flatness ±2 to 2.5 dB, Noise Figure 1.8 to 2.5 dB, Output Power 13 to 14 dBm. Tags: Chip, Low Noise Amplifier. More details for CHA3689-99F can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA3689-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    12.5 to 30 GHz Low Noise Amplifier GaAs Monolithic Microwave IC

General Parameters

  • Type
    Low Noise Amplifier
  • Application
    Military to commercial communication systems., Space Qualified
  • Frequency
    12.5 to 30 GHz
  • Gain
    20 to 26 dB
  • Gain Flatness
    ±2 to 2.5 dB
  • Noise Figure
    1.8 to 2.5 dB
  • Output Power
    13 to 14 dBm
  • Output Power
    0.01 to 0.02 W
  • P1dB
    0.01 to 0.02 W
  • IM3
    23 to 24 dBm
  • VSWR
    3.00:1, 2.00:1, 3.50:1, 2.50:1
  • Space Heritage
    Yes
  • Supply Voltage
    4 V (Drain Voltage)
  • Current Consumption
    90 to 120 mA (Drain Current)
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Chip
  • Dimensions
    2.45 x 1.21 x 0.1 mm
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 155 Degree C
  • RoHS
    Yes

Technical Documents
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