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L-Band GaAs Monolithic Low Noise Amplifier IC

SKU: CHA3801-99F

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The CHA3801-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 1 to 2 GHz, Gain 28 dB, Gain Flatness 0.5 dB, Noise Figure 1.45 dB, Output Power 15 dBm. Tags: Chip, Low Noise Amplifier. More details for CHA3801-99F can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA3801-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    L-Band GaAs Monolithic Low Noise Amplifier IC

General Parameters

  • Type
    Low Noise Amplifier
  • Application
    Space, Space Qualified
  • Frequency
    1 to 2 GHz
  • Gain
    28 dB
  • Gain Flatness
    0.5 dB
  • Noise Figure
    1.45 dB
  • Output Power
    15 dBm
  • Output Power
    0.03 W
  • P1dB
    0.03 W
  • IM3
    27 dBm
  • Saturated Power
    0.05 W
  • Reverse Isolation
    40 dB
  • Input Return Loss
    -15 dB
  • Output Return Loss
    -15 dB
  • Space Heritage
    Yes
  • Supply Voltage
    5 V (Drain Voltage)
  • Current Consumption
    70 mA
  • Transistor Technology
    pHemt
  • Technology
    GaAs
  • Package Type
    Chip
  • Dimensions
    1.6 x 1.4 x 0.1 mm
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes
  • Note
    Drain Current : 50 to 90 mA

Technical Documents
View details on the manufacturer's website
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