The CHA6710-FAB from United Monolithic Semiconductors is Space Qualified RF Amplifier that operates from 8-12.75 GHz. It has a linear gain of 22.5 dB and saturated output value of 37 dBm. This low-noise amplifier has a a gate length of 0.15 µm and gate voltage of -3.25 V. It requires a DC bias voltage of 55 V and a drain voltage of 30 V. This two stage medium power amplifier has an input return loss of 10 dB and an output return loss of 10 dB. This SMD GaAs semiconductor has leadless surface mount hermetic metal ceramic 6 x 6 mm² package. This RoHS-compliant amplifier is dedicated for a wide range of applications such as space, military and commercial communication system.
