The IRH9250 from Infineon Technologies is a Space Qualified P-Channel Power MOSFET with a continuous drain current of up to -14A and a pulsed drain current of -56 A. This radiation-hardened MOSFET has a drain-to-source breakdown voltage of -200 V and a drain-to-source ON state resistance of 0.315 Ohms. It has a maximum power dissipation of 150 W and a total gate charge of 200 nC. The MOSFET has been characterized for both Total Dose and Single Event Effects (SEE) with a radiation tolerance level of 100K Rads (Si). It has a mass of 11.5 g and is ideal for satellite applications.