200 V Rad-Hard P-Channel Power MOSFET

SKU: IRH9250

Space Qualified MOSFETs by Infineon Technologies (301 more products)

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IRH9250 Image

The IRH9250 from Infineon Technologies is a Space Qualified P-Channel Power MOSFET with a continuous drain current of up to -14A and a pulsed drain current of -56 A. This radiation-hardened MOSFET has a drain-to-source breakdown voltage of -200 V and a drain-to-source ON state resistance of 0.315 Ohms. It has a maximum power dissipation of 150 W and a total gate charge of 200 nC. The MOSFET has been characterized for both Total Dose and Single Event Effects (SEE) with a radiation tolerance level of 100K Rads (Si). It has a mass of 11.5 g and is ideal for satellite applications.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    200 V Rad-Hard P-Channel Power MOSFET

General Parameters

  • Segment
  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -14 A
  • Drain Source Resistance
    330 milliohm
  • Drain Source Breakdown Voltage
    -200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    200 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package

Technical Documents