100 V Rad-Hard P-Channel Power MOSFET


Space Qualified MOSFETs by Infineon Technologies (301 more products)

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IRHF9130 Image

The IRHF9130 from Infineon Technologies is a Space-Qualified P-Channel Power MOSFET with a continuous drain current of -6.5 A and a pulse drain current of -26 A. It has a drain-source breakdown voltage of -100 V, gate-source voltage of 20 V, and a maximum power dissipation of 25 W. This Single Event Effect (SEE) radiation-hardened MOSFET has a low on-state D-S static resistance of 0.3-0.35 ohms and has low gate charge. It has high voltage control, fast switching, and temperature stability of electrical parameters. This Class 1B per MIL-STD-750 ESD-rated MOSFET is available in a light hermetically sealed package and has a mass of 0.98 grams. It is ideal for space and satellite applications.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    100 V Rad-Hard P-Channel Power MOSFET

General Parameters

  • Segment
  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -6.5 A
  • Drain Source Resistance
    350 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package

Technical Documents

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