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100 V Rad-Hard P-Channel Power MOSFET

SKU: IRHF9130

Space Qualified MOSFETs by Infineon Technologies
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The IRHF9130 from Infineon Technologies is a Space-Qualified P-Channel Power MOSFET with a continuous drain current of -6.5 A and a pulse drain current of -26 A. It has a drain-source breakdown voltage of -100 V, gate-source voltage of 20 V, and a maxi

Product Specifications

Product Details

  • Part Number
    IRHF9130
  • Manufacturer
    Infineon Technologies
  • Description
    100 V Rad-Hard P-Channel Power MOSFET

General Parameters

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    -6.5 A
  • Drain Source Resistance
    350 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    TO-205AF
  • Industry
    Space, Military
  • Standard
    MIL-STD-750 Class 1B
  • Space Standard
    MIL-PRF-19500/630, MIL-STD-750
  • Package Type
    Through Hole

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