The IRHF9130 from Infineon Technologies is a Space-Qualified P-Channel Power MOSFET with a continuous drain current of -6.5 A and a pulse drain current of -26 A. It has a drain-source breakdown voltage of -100 V, gate-source voltage of 20 V, and a maximum power dissipation of 25 W. This Single Event Effect (SEE) radiation-hardened MOSFET has a low on-state D-S static resistance of 0.3-0.35 ohms and has low gate charge. It has high voltage control, fast switching, and temperature stability of electrical parameters. This Class 1B per MIL-STD-750 ESD-rated MOSFET is available in a light hermetically sealed package and has a mass of 0.98 grams. It is ideal for space and satellite applications.