IRHG567110

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IRHG567110 Image

The IRHG567110 from Infineon Technologies is a MOSFET with Continous Drain Current -0.96 to 1.6 A, Drain Source Resistance 290 to 690 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to 4 V. Tags: Through Hole. More details for IRHG567110 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHG567110
  • Manufacturer
    Infineon Technologies
  • Description
    100 V Combination 2N-2P Channel Radiation Hardened Power MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    -0.96 to 1.6 A
  • Drain Source Resistance
    290 to 690 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 4 V
  • Gate Charge
    13.4 to 17 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    MO-036AB

Technical Documents