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Radiation-Hardened 2N-2P Channel 100 V Power MOSFET

SKU: IRHG6110

Space Qualified MOSFETs by Infineon Technologies
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The IRHG6110 from Infineon Technologies is a Space Qualified MOSFET with a drain-to-source breakdown voltage of +/- 100 V and a gate-to-source voltage of +/- 20 V. This radiation-hardened MOSFET has a continuous drain current range of -0.75 to 1 A and

Product Specifications

Product Details

  • Part Number
    IRHG6110
  • Manufacturer
    Infineon Technologies
  • Description
    Radiation-Hardened 2N-2P Channel 100 V Power MOSFET

General Parameters

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channel
    Quad
  • Continous Drain Current
    -0.75 to 1 A
  • Drain Source Resistance
    600 to 1200 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    MO-036AB
  • Industry
    Space, Military
  • Space Standard
    MIL-STD-750
  • Package Type
    Through Hole

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