250 V Radiation Hardened Power MOSFET

SKU: IRHLQ7S7214

Space Qualified MOSFETs by Infineon Technologies (301 more products)

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IRHLQ7S7214 Image

The IRHLQ7S7214 from Infineon Technologies is a Space Qualified MOSFET with a drain-to-source breakdown voltage of 250 V and a gate-to-source voltage of +/- 10 V. This radiation-hardened MOSFET has a continuous drain current range of 1.6-2.6 A and a pulsed drain current of 10.4 A. It has a rise time of 57 ns and a fall time of 55 ns. The MOSFET has a radiation tolerance TID of up to 100 krad(Si) and is single event effect (SEE) hardened. It has a total gate charge of 18 nC and a maximum power dissipation of 12 W. The MOSFET comes in a hermetically sealed ceramic package and is qualified according to MIL-PRF-19500 for space applications. It is ideal for applications such as DC-DC converters and motor drives and provides a simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

Product Specifications

Product Details

  • Part Number
    IRHLQ7S7214
  • Manufacturer
    Infineon Technologies
  • Description
    250 V Radiation Hardened Power MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    2.6 A
  • Drain Source Resistance
    1000 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    18 nC
  • Power Dissipation
    12 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    28-Pin LCC

Technical Documents