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60 V Radiation Hardened N-CShannel MOSFET

SKU: IRHLUBC770Z4

Space Qualified MOSFETs by Infineon Technologies
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IRHLUBC770Z4 Image

The IRHLUBC770Z4 from Infineon Technologies is a Radiation-Hardened N-Channel Power MOSFET with a continuous drain current of 0.5-0.8 A and a pulsed drain current of 3.2 A. This MOSFET has a gate-to-source voltage range of -10 to 10 V and a maximum pow

Product Specifications

Product Details

  • Part Number
    IRHLUBC770Z4
  • Manufacturer
    Infineon Technologies
  • Description
    60 V Radiation Hardened N-CShannel MOSFET

General Parameters

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    0.8 A
  • Drain Source Resistance
    680 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    UBC
  • Industry
    Space, Military
  • Standard
    MIL-STD-750 Class 3A
  • Space Standard
    MIL-PRF-19500, MIL-STD-750
  • Package Type
    Surface Mount

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