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-60 V Radiation Hardened P-Channel MOSFET

SKU: IRHLUBC7970Z4

Space Qualified MOSFETs by Infineon Technologies
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The IRHLUBC7970Z4 from Infineon Technologies is a Space-Qualified MOSFET with a drain-to-source breakdown voltage of -60 V and a continuous drain current of -0.53 A. This radiation-hardened MOSFET has a gate-to-source voltage of +/- 10 V and a gate thr

Product Specifications

Product Details

  • Part Number
    IRHLUBC7970Z4
  • Manufacturer
    Infineon Technologies
  • Description
    -60 V Radiation Hardened P-Channel MOSFET

General Parameters

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    -0.53 A
  • Drain Source Resistance
    1400 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0 to 0.57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    UBC
  • Industry
    Space, Military
  • Standard
    MIL-STD-750 Class 0B
  • Space Standard
    MIL-PRF-19500, MIL-STD-750
  • Package Type
    Surface Mount

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