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-100 V P-Channel Radiation Hardened Power MOSFET

SKU: IRHNA597160

Space Qualified MOSFETs by Infineon Technologies
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The IRHNA597160 from Infineon Technologies is a Space-Qualified MOSFET that is designed for power devices in space and other radiation environments. This hermetically-sealed MOSFET has a drain-source breakdown voltage of -100 V and a continuous drain c

Product Specifications

Product Details

  • Part Number
    IRHNA597160
  • Manufacturer
    Infineon Technologies
  • Description
    -100 V P-Channel Radiation Hardened Power MOSFET

General Parameters

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    -47 A
  • Drain Source Resistance
    49 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    170 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    SMD-2
  • Industry
    Space, Military
  • Standard
    MIL-STD-750 Class 3A
  • Space Standard
    MIL-STD-750, MIL-PRF-19500/713
  • Package Type
    Surface Mount

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