The IRHNA597160 from Infineon Technologies is a Space-Qualified MOSFET that is designed for power devices in space and other radiation environments. This hermetically-sealed MOSFET has a drain-source breakdown voltage of -100 V and a continuous drain current of -47 A. It has a pulsed drain current of -188 A and an ultra low static on-state resistance of 49 mOhms. This power MOSFET has a total power consumption of 250 W and a low total gate charge of 170 nC. It has a lightweight simple drive requirements and fast-switching qualified according to MIL-PRF-750 for space applications. This p-channel enhancement mode MOSFET characterized for single event effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). It weighs 3.3 g and is ideal for DC-DC converter and motor drives applications.
