The IRHNA67164 from Infineon Technologies is a Space Qualified MOSFETs with a continuous drain current range of 56 A. This power MOSFET has a drain-to-source breakdown voltage of 150 V and a gate threshold voltage of 2-4 V. It has a pulsed drain current of 224 A and a low static drain-to-source on-state resistance of 0.018 Ohms. The MOSFET has a total inductance of 2.8 nH and has a total gate charge of 230 nC. It is a single event effect (SEE) hardened and has a light weight hermetically sealed surface mount package. The MOSFET is qualified according to MIL-STD-750 for space applications and is suitable for DC-DC converters and motor controllers.
