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250 V N-channel Power MOSFET for Space Applications

SKU: IRHNJ67234

Space Qualified MOSFETs by Infineon Technologies
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The IRHNJ67234 from Infineon Technologies is a Space Qualified MOSFETs with a drain-to-source breakdown voltage of 250 V. It has a gate threshold voltage of 2-4 V and a continuous drain current range of 7.8-12.4 A. This power MOSFET has a pulsed drain

Product Specifications

Product Details

  • Part Number
    IRHNJ67234
  • Manufacturer
    Infineon Technologies
  • Description
    250 V N-channel Power MOSFET for Space Applications

General Parameters

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    12.4 A
  • Drain Source Resistance
    210 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    50 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    SMD-0.5
  • Industry
    Space, Military
  • Standard
    MIL-STD-750 Class 2
  • Space Standard
    MIL-PRF-19500, MIL-STD-750
  • Package Type
    Surface Mount

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