The JANSR2N7593U3 from Microchip Technology is a N-Channel Enhancement Mode MOSFET with a drain-source voltage of 250 V. It has a gate-source breakdown voltage of over 20 V and a drain-source on-resistance of up to 0.210 ohms. This MOSFET transistor has a gate-source leakage current of about 100 nA and a pulse width of less than 300 µs with a duty cycle of less than 2%. It has a continuous source current of 12.4 A and pulsed source current of 49.6 A. This rad-hard MOSFET has a low RDS(on) and low total gate charge of typically 30 nC. It features fast switching, easy paralleling and hermetically sealed construction. It is available in a surface-mount ceramic package and is ideal for applications in DC–DC converters, motor control and switch mode power supplies.