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Radiation Hardened 60 V N-channel Power MOSFET

SKU: STRH40N6

Space Qualified MOSFETs by STMicroelectronics
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The STRH40N6 from STMicroelectronics is a Space-Qualified MOSFET that has a drain-source voltage of 60 V. It has a continuous drain current of 30 A, a pulsed drain current of 120 A, and an on-state drain-source resistance of 36 mohm. This MOSFET is sin

Product Specifications

Product Details

  • Part Number
    STRH40N6
  • Manufacturer
    STMicroelectronics
  • Description
    Radiation Hardened 60 V N-channel Power MOSFET

General Parameters

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    76 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 5.5 V
  • Gate Charge
    35 to 52 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    SMD.5
  • Industry
    Space, Military
  • Space Standard
    MIL-STD-750E
  • Package Type
    Surface Mount

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