The STRH8N10 from STMicroelectronics is a Space-Qualified MOSFET that has a drain-source voltage of 100 V and a continuous drain current of 6 A. It has a pulsed drain current of 24 A and an on-state drain-source resistance of 27 mohm. This MOSFET is single event effects (SEE) radiation hardened and has a radiation tolerance TID of up to 50 krad. It has a gate charge of 18.5 nC and is 100% avalanche-tested. This ESCC-certified N-channel power MOSFET features fast-switching and high reliability performance. It has an SMD.5 hermetic packaging and suitable for in-satellite power conversion, motor control, and power switch circuits.
