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100 V Radiation-Hardened N-Channel Power MOSFET

SKU: STRH8N10

Space Qualified MOSFETs by STMicroelectronics
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The STRH8N10 from STMicroelectronics is a Space-Qualified MOSFET that has a drain-source voltage of 100 V and a continuous drain current of 6 A. It has a pulsed drain current of 24 A and an on-state drain-source resistance of 27 mohm. This MOSFET is si

Product Specifications

Product Details

  • Part Number
    STRH8N10
  • Manufacturer
    STMicroelectronics
  • Description
    100 V Radiation-Hardened N-Channel Power MOSFET

General Parameters

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    72 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 5.5 V
  • Gate Charge
    15 to 22 nC
  • Power Dissipation
    0 to 62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package
    SMD.5
  • Industry
    Space, Military
  • Space Standard
    MIL-STD-750E
  • Package Type
    Surface Mount

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