The RAD7130-Nyx from VPT Components is a Radiation-Hardened N-Channel MOSFET developed for long-duration satellite missions and aerospace applications where reliability is paramount. Featuring a 100 V drain-source voltage, 22 A continuous drain current, and a low 80 mΩ RDS(on), this MOSFET delivers excellent efficiency and switching performance.
Designed to withstand 100 krad(Si) total ionizing dose, it ensures robust operation in harsh orbital radiation exposure. A 50 nC gate charge further enhances switching efficiency, making it suitable for power conditioning, motor control, and avionics systems.
Housed in the rugged TO-257AA package, the RAD7130-Nyx is ideal for military, defense, satellite power systems, and high-reliability flight hardware, supporting stable electrical performance in extreme environments.
