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Low Noise Matched Dual NPN Transistor

SKU: MAT02S

RF Transistor by Analog Devices (1 more product)
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The MAT02S from Analog Devices is a RF Transistor with Voltage - Collector Base (Vcbo) 40 V, Voltage - Emitter Base 40 V, Collector Current (Ic) 20 mA, Power Dissipation (Pdiss) 0.5 W, Junction Temperature (Tj) 150 Degree C. More details for MAT02S can be seen below.

Product Specifications

Product Details

  • Part Number
    MAT02S
  • Manufacturer
    Analog Devices
  • Description
    Low Noise Matched Dual NPN Transistor

General Parameters

  • Transistor Type
    Dual Monolithic
  • Technology
    NPN
  • CW/Pulse
    CW
  • Breakdown Voltage
    1 to 40 V
  • Voltage - Collector Base (Vcbo)
    40 V
  • Voltage - Emitter Base
    40 V
  • Collector Current (Ic)
    20 mA
  • Power Dissipation (Pdiss)
    0.5 W
  • Junction Temperature (Tj)
    150 Degree C
  • Grade
    Space Qualified
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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