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Low Noise Matched Dual NPN Transistor

SKU: MAT03S

RF Transistor by Analog Devices (1 more product)
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The MAT03S from Analog Devices is a RF Transistor with Voltage - Collector Base (Vcbo) 36 V, Voltage - Emitter Base 36 V, Collector Current (Ic) 20 mA, Power Dissipation (Pdiss) 0.5 W, Junction Temperature (Tj) 150 Degree C. More details for MAT03S can be seen below.

Product Specifications

Product Details

  • Part Number
    MAT03S
  • Manufacturer
    Analog Devices
  • Description
    Low Noise Matched Dual NPN Transistor

General Parameters

  • Transistor Type
    Dual Monolithic
  • Technology
    PNP
  • CW/Pulse
    CW
  • Breakdown Voltage
    1 to 36 V
  • Voltage - Collector Base (Vcbo)
    36 V
  • Voltage - Emitter Base
    36 V
  • Collector Current (Ic)
    20 mA
  • Power Dissipation (Pdiss)
    0.5 W
  • Junction Temperature (Tj)
    150 Degree C
  • Thermal Resistance
    80 to 180 Degree C/W
  • Grade
    Space Qualified
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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