Enhancement Mode GaN Power Transistor

SKU: EPC2031

Note : Your request will be directed to Efficient Power Conversion.

EPC2031 Image

The EPC2031 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 60 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 48 A, Drain Leakage Current (Id) 0.1 to 0.8 mA (Drain-Source), Gate Leakage Current (Ig) 0.1 to 9 mA (Gate to Source). More details for EPC2031 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC2031
  • Manufacturer
    Efficient Power Conversion
  • Description
    Enhancement Mode GaN Power Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN
  • Application
    High Frequency DC-DC Conversion, Motor Drive, Industrial Automation, Synchronous Rectification, Class-D Audio
  • CW/Pulse
    Pulse
  • Threshold Voltage
    0.8 to 2.5 V (Gate)
  • Voltage - Drain-Source (Vdss)
    60 V
  • Voltage - Gate-Source (Vgs)
    -4 to 6 V
  • Drain Current
    48 A
  • Drain Leakage Current (Id)
    0.1 to 0.8 mA (Drain-Source)
  • Gate Leakage Current (Ig)
    0.1 to 9 mA (Gate to Source)
  • Input Capacitance
    1640 to 2000 pF
  • On Resistance
    2 to 2.6 mOhms (Drain-Source)
  • Output Capacitance
    980 to 1500 pF
  • Thermal Resistance
    0.45 to 45 Degree C/W
  • Package
    Die
  • Dimension
    4.6 x 2.6 mm
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -40 to 150 Degree C

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