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100 V Enhancement Mode GaN Power Transistor

SKU: EPC2051

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EPC2051 Image

The EPC2051 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 100 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 1.7 A, Drain Leakage Current (Id) 4 to 250 uA (Drain-Source), Gate Leakage Current (Ig) 0.001 to 2 mA (Gate to Source). More details for EPC2051 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC2051
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement Mode GaN Power Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN
  • Application
    Open Rack Server Architectures, Lidar/Pulsed Power Applications, Power Supplies, Class D Audio, LED Lighting, Low Inductance Motor Drive, ToF module using Vcsel laser for camera modules, laptops and smart phones
  • CW/Pulse
    Pulse
  • Threshold Voltage
    0.8 to 2.5 V (Gate)
  • Voltage - Drain-Source (Vdss)
    100 V
  • Voltage - Gate-Source (Vgs)
    -4 to 6 V
  • Drain Current
    1.7 A
  • Drain Leakage Current (Id)
    4 to 250 uA (Drain-Source)
  • Gate Leakage Current (Ig)
    0.001 to 2 mA (Gate to Source)
  • Input Capacitance
    224 to 297 pF
  • On Resistance
    20 to 25 mOhms (Drain-Source)
  • Output Capacitance
    86 to 129 pF
  • Thermal Resistance
    3.8 to 92 Degree C/W
  • Package
    Die
  • Dimension
    1.3 x 0.85 mm
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -40 to 150 Degree C

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