100 V Enhancement Mode GaN Power Transistor

SKU: EPC2071

Note : Your request will be directed to Efficient Power Conversion.

EPC2071 Image

The EPC2071 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 100 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 64 A, Drain Leakage Current (Id) 0.001 to 0.12 mA (Drain-Source), Gate Leakage Current (Ig) 0.006 to 7.1 mA (Gate to Source). More details for EPC2071 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC2071
  • Manufacturer
    Efficient Power Conversion
  • Description
    100 V Enhancement Mode GaN Power Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN
  • Application
    48 V DC-DC converters, BLDC motor drives, Sync rectification for AC/DC and DC-DC, Point-of-load converters, Solar inverters, Lidar, eMobility
  • CW/Pulse
    Pulse
  • Threshold Voltage
    0.7 to 2.5 V (Gate)
  • Voltage - Drain-Source (Vdss)
    100 V
  • Voltage - Gate-Source (Vgs)
    -4 to 6 V
  • Drain Current
    64 A
  • Drain Leakage Current (Id)
    0.001 to 0.12 mA (Drain-Source)
  • Gate Leakage Current (Ig)
    0.006 to 7.1 mA (Gate to Source)
  • Input Capacitance
    2664 to 3931 pF
  • On Resistance
    1.7 to 2.2 mOhms (Drain-Source)
  • Output Capacitance
    878 to 976 pF
  • Thermal Resistance
    0.4 to 59 Degree C/W
  • Package
    Die
  • Dimension
    4.45 x 2.3 mm
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -40 to 150 Degree C

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