The EPC2219 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 65 V, Voltage - Gate-Source (Vgs) 5.75 V, Drain Current 0.5 A, Drain Leakage Current (Id) 20 to 100 mA (Drain-Source), Gate Leakage Current (Ig) 0.0001 to 1 mA (Gate to Source). More details for EPC2219 can be seen below.
