The EPC29215_55 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 200 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 32 A, Drain Leakage Current (Id) 0.15 to 0.48 mA (Drain-Source), Gate Leakage Current (Ig) 0.0002 to 8.7 mA (Gate to Source). More details for EPC29215_55 can be seen below.
