Rad Hard Enhancement Mode Power Transistor

SKU: EPC7018

Note : Your request will be directed to Efficient Power Conversion.

EPC7018 Image

The EPC7018 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 100 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 90 A, Drain Leakage Current (Id) 0.001 to 0.4 mA (Drain-Source), Gate Leakage Current (Ig) 0.01 to 0.5 mA (Gate to Source). More details for EPC7018 can be seen below.

Product Specifications

Product Details

  • Part Number
    EPC7018
  • Manufacturer
    Efficient Power Conversion
  • Description
    Rad Hard Enhancement Mode Power Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN
  • Application Industry
    Commercial
  • Application Type
    Satellite
  • Application
    DC-DC power, motor drives, lidar, ion thrusters, EPS & avionics, Deep space probes, High frequency rad hard DC-DC conversion, Rad hard motor drives
  • CW/Pulse
    Pulse
  • Threshold Voltage
    0.8 to 2.5 V (Gate)
  • Voltage - Drain-Source (Vdss)
    100 V
  • Voltage - Gate-Source (Vgs)
    -4 to 6 V
  • Drain Current
    90 A
  • Drain Leakage Current (Id)
    0.001 to 0.4 mA (Drain-Source)
  • Gate Leakage Current (Ig)
    0.01 to 0.5 mA (Gate to Source)
  • Input Capacitance
    1828 pF
  • On Resistance
    2.7 to 3.9 mOhms (Drain-Source)
  • Output Capacitance
    1025 pF
  • Thermal Resistance
    0.4 to 42 Degree C/W
  • Package
    Die
  • Dimension
    6.05 x 2.3 mm
  • RoHS
    Yes
  • Grade
    Space Qualified
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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