IGN0450M850

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IGN0450M850 Image

The IGN0450M850 from Integra Technologies, Inc. is a RF Transistor with Frequency 400 to 450 MHz, Power 59.29 to 60.61 dBm, Power(W) 850 to 1150 W, Duty_Cycle 10 %, Gain 19.8 to 21.8 dB. Tags: Flange. More details for IGN0450M850 can be seen below.

Product Specifications

Product Details

  • Part Number
    IGN0450M850
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    High-power GaN-on-SiC RF power transistor for P band radar systems

General Parameters

  • Transistor Type
    HEMT
  • Segment
    Satellite
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    400 to 450 MHz
  • Power
    59.29 to 60.61 dBm
  • Power(W)
    850 to 1150 W
  • Duty_Cycle
    10 %
  • Gain
    19.8 to 21.8 dB
  • VSWR
    2:1 to 3:1
  • Supply Voltage
    50 V
  • Input Power
    15 W
  • Voltage - Drain-Source (Vdss)
    180 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    70 to 85 %
  • Drain Current
    50 A
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • Package Type
    Flange
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space Qualified
  • Storage Temperature
    -55 to 150 Degree C

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