The IGN1011S3600 from Integra Technologies is an RF Transistor with a frequency range of 1030-1090 MHz. This transistor has an output power greater than 3600 W and a gain of 18-22 dB. It features GaN on SiC HEMT technology and has an efficiency of up to 75 %. The transistor has a DC drain-source voltage of 400 V and requires an RF input power of 90 W. It has a gate pinch-off voltage of -5 V and a peak thermal resistance of 0.06 degree C/W. The transistor is RoHS and REACH compliant and is ideally suited for uplink and downlink transponders and L-band avionics IFF and SSR systems.